Experimental and computational insights in the growth of gallium-doped zinc oxide nanostructures with superior field emission properties
Abstract
Well-aligned, single-crystalline Ga-doped 00} to two sets of facets: ({11
1}, {11
}) and ({
201}, {
10
}), which eventually led to a pagoda shape. Based on computational simulation results, gallium lowers the surface energies of the ({11
1}, {11
}) and ({
201}, {
10
}) planes but increases that of the {1
00} plane. We proposed a new growth model, which involves the change of surface energy calculated by computational simulation due to Ga doping, to interpret why the smooth {1
00} planes of
1}, {11
}) and ({
201}, {
10
}) planes of nanopagodas. The nanopagodas not only possess excellent crystal quality but also exhibit remarkable field emission properties. Field emitters made of Ga-doped ZnO nanopagodas had a low turn-on field due to the decrease of work function and the increase of conductivity caused by Ga; simultaneously, the interesting pagoda shape enhanced significantly the field emission β values by 18 times.