Issue 17, 2013
From the journal:

CrystEngComm

Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires†

Yongsheng Xu,a   Binbin Yao,a   Dan Liu,b   Weiwei Lei,*b   Pinwen Zhu,a   Qiliang Cui*a  and  Guangtian Zoua  

* Corresponding authors

a State Key Laboratory of Superhard Materials, Jilin University, Changchun 130012, People's Republic of China
E-mail: cql@jlu.edu.cn

b Institute for Frontier Materials, Deakin University, Victoria 3216, Australia
E-mail: weiwei.lei@deakin.edu.au

Abstract

Room-temperature ferromagnetism has been observed in Mg-doped AlN (AlN:Mg) nanowires. The saturation magnetization and the coercivity of the AlN:Mg nanowires are about 0.051 emu g−1 and 127 Oe, respectively. The Al vacancy and substitutional Mg could play very important roles in room temperature ferromagnetism. These findings confirmed the room temperature ferromagnetism in diluted magnetic semiconductor AlN:Mg nanowires by doping with the nonmagnetic element Mg.

Graphical abstract: Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires

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Article information

DOI
https://doi.org/10.1039/C3CE26920E
Article type
Communication
Submitted
26 Nov 2012
Accepted
14 Feb 2013
First published
15 Feb 2013

CrystEngComm, 2013,15, 3271-3274

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Room temperature ferromagnetism in new diluted magnetic semiconductor AlN:Mg nanowires

Y. Xu, B. Yao, D. Liu, W. Lei, P. Zhu, Q. Cui and G. Zou, CrystEngComm, 2013, 15, 3271 DOI: 10.1039/C3CE26920E

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