Issue 13, 2013

Stress induced texture formation in surface crystallized SiO2 glass

Abstract

Solid samples of pure SiO2-glass are annealed at 1400 °C for 0.5–8 h in order to grow high-cristobalite which transforms to low-cristobalite during cooling. Crystal orientations are analyzed using X-ray diffraction up to 900 °C and electron backscatter diffraction (EBSD). Tensions during phase transformation lead to 110- and 101-textures near the surface and local textures around major cracks. Throughout the crystallized layer (110)-twins are detected. EBSD-analysis of untreated surfaces is problematic due to a high degree of surface fracturing and very localized EBSD-pattern acquisition. A glass skin covering the crystals was not detected.

Graphical abstract: Stress induced texture formation in surface crystallized SiO2 glass

Article information

Article type
Paper
Submitted
12 Nov 2012
Accepted
14 Jan 2013
First published
16 Jan 2013

CrystEngComm, 2013,15, 2392-2400

Stress induced texture formation in surface crystallized SiO2 glass

W. Wisniewski, S. Berndt, M. Müller and C. Rüssel, CrystEngComm, 2013, 15, 2392 DOI: 10.1039/C3CE26843H

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