Electrical and optical properties of single zigzag SnO2 nanobelts

Faheem K. Butt; Chuanbao Cao; Waheed S. Khan; Muhammad Safdar; Xuewen Fu; Muhammad Tahir; Faryal Idrees; Zulfiqar Ali; Ghulam Nabi; Dapeng Yu

doi:10.1039/C2CE26728D

Electrical and optical properties of single zigzag SnO₂ nanobelts

Faheem K. Butt,^a Chuanbao Cao,*^a Waheed S. Khan,^a Muhammad Safdar,^b Xuewen Fu,^c Muhammad Tahir,^a Faryal Idrees,^a Zulfiqar Ali,^a Ghulam Nabi^a and Dapeng Yu^c

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^a Research Center of Materials Science, Beijing Institute of Technology, Beijing, People's Republic of China
E-mail: cbcao@bit.edu.cn
Fax: +86 10 6891 2001
Tel: +86 10 6891 3792

^b National Center for Nanoscience and Technology, Chinese Academy of Sciences, Beijing 100190, People's Republic of China

^c State Key Laboratory for Mesoscopic Physics and Electron Microscopy Laboratory, Department of Physics, Peking University, Beijing 100871, People's Republic of China

Abstract

We report here on investigations of electrical and optical properties of single zigzag SnO₂ nanobelts. Large scale zigzag nanobelts were obtained on a silicon substrate by a Chemical Vapor Deposition (CVD) approach. The average value of carrier concentrations (N_d) and electron mobility (μ) were calculated to be 1.39 × 10¹⁸ cm⁻³ and 70.76 cm² V⁻¹ s⁻¹, respectively. Room temperature PL exhibits a broad emission peak centred at 600 nm. Three Raman active modes at 474.8, 633.8, 775.8 cm⁻¹ were observed. Electron paramagnetic resonance measurements suggest the presence of many singly ionized states.

CrystEngComm

Electrical and optical properties of single zigzag SnO₂ nanobelts

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Electrical and optical properties of single zigzag SnO₂ nanobelts

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