Issue 66, 2013
From the journal:

Chemical Communications

Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature†

Chia-Yun Chena  and  Ching-Ping Wong*ab  

* Corresponding authors

a School of Materials Science and Engineering, Georgia Institute of Technology, 771 Ferst Drive NW, Atlanta, USA
E-mail: cp.wong@mse.gatech.edu

b Faculty of Engineering, The Chinese University of Hong Kong, Shatin, Hong Kong, China

Abstract

Multiple etching pathways for the formation of porous Si nanostructures are visualized with the addition of ethylene glycol in metal-assisted chemical etching. The monotonic transition from solid to porous morphologies of Si nanostructures along with remarkable photoluminescence (PL) emission efficiency and distinct wetting phenomena can be observed.

Graphical abstract: Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

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Article information

DOI
https://doi.org/10.1039/C3CC43466D
Article type
Communication
Submitted
09 May 2013
Accepted
11 Jun 2013
First published
12 Jul 2013

Chem. Commun., 2013,49, 7295-7297

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Morphological transition of Si surfaces from solid nanowires to porous nanobelts at room temperature

C. Chen and C. Wong, Chem. Commun., 2013, 49, 7295 DOI: 10.1039/C3CC43466D

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