Magnetoresistive field-effect transistors based on organic donor–acceptor blends

Abstract

We present magnetoresistive field-effect transistors, which are sensitive to external magnetic fields as low as 1.7 mT. The magnetosensitivity is achieved through the mixture of electron acceptor 1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) with electron donor 2,2′,7,7′-tetrakis-(N,N-di-p-methylphenylamino)-9,9′-spirobifluorene (Spiro-TTB), which leads to magnetic-field-sensitive intermolecular radical pair states. These states are responsible for the magnetoresistance effect in Spiro-TTB–HAT-CN blends.