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Issue 20, 2012
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Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

Yu-Chuan Lin,a  Wenjing Zhang,a  Jing-Kai Huang,ab  Keng-Ku Liu,a  Yi-Hsien Lee,a  Chi-Te Liang,c  Chih-Wei Chud  and  Lain-Jong Li*ae 
Author affiliations

* Corresponding authors

a Institute of Atomic and Molecular Sciences, Academia Sinica, Taipei, Taiwan
E-mail: lanceli@gate.sinica.edu.tw

b Department of Photonics, National Chiao Tung University, HsinChu 300, Taiwan

c Department of Physics, National Taiwan University, Taipei 106, Taiwan

d Research Center for Applied Sciences, Academia Sinica, Taipei, Taiwan

e Department of Physics, National Tsing Hua University, HsinChu 300, Taiwan

Abstract

Atomically thin molybdenum disulfide (MoS2) layers have attracted great interest due to their direct-gap property and potential applications in optoelectronics and energy harvesting. Meanwhile, they are extremely bendable, promising for applications in flexible electronics. However, the synthetic approach to obtain large-area MoS2 atomic thin layers is still lacking. Here we report that wafer-scale MoS2 thin layers can be obtained using MoO3 thin films as a starting material followed by a two-step thermal process, reduction of MoO3 at 500 °C in hydrogen and sulfurization at 1000 °C in the presence of sulfur. Spectroscopic, optical and electrical characterizations reveal that these films are polycrystalline and with semiconductor properties. The obtained MoS2 films are uniform in thickness and easily transferable to arbitrary substrates, which make such films suitable for flexible electronics or optoelectronics.

Graphical abstract: Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

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Publication details

The article was received on 12 Jul 2012, accepted on 26 Aug 2012 and first published on 29 Aug 2012


Article type: Paper
DOI: 10.1039/C2NR31833D
Citation: Nanoscale, 2012,4, 6637-6641

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    Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization

    Y. Lin, W. Zhang, J. Huang, K. Liu, Y. Lee, C. Liang, C. Chu and L. Li, Nanoscale, 2012, 4, 6637
    DOI: 10.1039/C2NR31833D

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