Issue 24, 2012
From the journal:

Nanoscale

Constructing a large variety of Dirac-cone materials in the Bi1−xSbx thin film system

Shuang Tang*a  and  Mildred S. Dresselhaus*bc  

* Corresponding authors

a Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
E-mail: tangs@mit.edu
Fax: +1 617-253-6827
Tel: +1 617-253-6860

b Department of Physics, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
E-mail: millie@mgm.mit.edu
Fax: +1 617-253-6827
Tel: +1 617-253-6864

c Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA

Abstract

We theoretically predict that a large variety of Dirac-cone materials can be constructed in Bi1−xSbx thin films and we here show how to construct single-, bi- and tri-Dirac-cone materials with various amounts of wave vector anisotropy. These different types of Dirac cones can be of special interest to electronic device design, quantum electrodynamics and other fields.

Graphical abstract: Constructing a large variety of Dirac-cone materials in the Bi1−xSbx thin film system

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Article information

DOI
https://doi.org/10.1039/C2NR32436A
Article type
Paper
Submitted
24 Aug 2012
Accepted
12 Oct 2012
First published
23 Oct 2012

Nanoscale, 2012,4, 7786-7790

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Constructing a large variety of Dirac-cone materials in the Bi1−xSbx thin film system

S. Tang and M. S. Dresselhaus, Nanoscale, 2012, 4, 7786 DOI: 10.1039/C2NR32436A

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