Issue 6, 2012

Gating electrical transport through DNA molecules that bridge between silicon nanogaps

Abstract

DNA electronic devices were prepared on silicon-based three-terminal electrodes. Both ends of DNA molecules (400 bp long, mixed sequences) were bridged via chemical bonds between the source–drain nanogap (120 nm) electrodes. S-Shaped IV curves were obtained and the electric current can be modulated by the gate voltage. The DNA molecules act as semiconducting p-type nanowires in the three-terminal device.

Graphical abstract: Gating electrical transport through DNA molecules that bridge between silicon nanogaps

Supplementary files

Article information

Article type
Communication
Submitted
27 Dec 2011
Accepted
29 Jan 2012
First published
30 Jan 2012

Nanoscale, 2012,4, 1975-1977

Gating electrical transport through DNA molecules that bridge between silicon nanogaps

S. Takagi, T. Takada, N. Matsuo, S. Yokoyama, M. Nakamura and K. Yamana, Nanoscale, 2012, 4, 1975 DOI: 10.1039/C2NR12106A

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Social activity

Spotlight

Advertisements