Issue 5, 2012
From the journal:

Nanoscale

Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon†

Eleonora Russo-Averchi,*a   Martin Heiss,a   Lionel Michelet,a   Peter Krogstrup,b   Jesper Nygard,b   Cesar Magen,c   Joan Ramon Morante,de   Emanuele Uccelli,a   Jordi Arbiolf  and  A. Fontcuberta i Morrala  

* Corresponding authors

a Laboratoire des Materiaux Semiconducteurs, Ecole Polytechnique Federale de Lausanne, 1015 Lausanne, Switzerland
E-mail: anna.fontcuberta-morral@epfl.ch
Fax: +41 21 693
Tel: +41 21 693 73 94

b Nano-Science Center, Niels Bohr Institute, University of Copenhagen, 2100 Copenhagen, Denmark

c Instituto de Nanociencia de Aragon-ARAID and Departamento de Física de la Materia Condensada, Universidad de Zaragoza, 50018 Zaragoza, Spain

d Catalonia Institute for Energy Research, IREC, 08930 Sant Adrià del Besòs, Spain

e Department dÉlectrònica, Universitat de Barcelona, 08028 Barcelona, Spain

f Institució Catalana de Recerca i Estudis Avançats (ICREA) and Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, E-08193 Bellaterra, CAT, Spain

Abstract

Multiple seed formation by three-dimensional twinning at the initial stages of growth explains the manifold of orientations found when self-catalyzed GaAs nanowires grow on silicon. This mechanism can be tuned as a function of the growth conditions by changing the relative size between the GaAs seed and the Ga droplet. We demonstrate how growing under high V/III ratio results in a 100% yield of vertical nanowires on silicon(111). These results open up the avenue towards the efficient integration of III–V nanowire arrays on the silicon platform.

Graphical abstract: Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

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Article information

DOI
https://doi.org/10.1039/C2NR11799A
Article type
Paper
Submitted
20 Nov 2011
Accepted
15 Jan 2012
First published
19 Jan 2012

Nanoscale, 2012,4, 1486-1490

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Suppression of three dimensional twinning for a 100% yield of vertical GaAs nanowires on silicon

E. Russo-Averchi, M. Heiss, L. Michelet, P. Krogstrup, J. Nygard, C. Magen, J. R. Morante, E. Uccelli, J. Arbiol and A. Fontcuberta i Morral, Nanoscale, 2012, 4, 1486 DOI: 10.1039/C2NR11799A

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