Optical and electrical applications of ZnSxSe1−xnanowires-network with uniform and controllable stoichiometry

Abstract

Single crystalline ternary ZnS_xSe_1−x nanowires with uniform chemical stoichiometry and accurately controllable compositions (0≤ x ≤ 1) were synthesized through a simple and yet effective one-step approach with a specially designed modification. Energy-gap-tuning via compositional change was achieved for a direct band gap from 2.6 to 3.6 eV. Raman spectroscopy studies revealed typical two-mode behavior indicative of high miscibility in the alloyed compound. Moreover, the enhanced electrical-conductivity and gating effect behavior after the formation of ternary alloy enable their application in nano/micro-field effect transistor devices. In addition, the slow recombination rate in the photo-response process indicates their potential for photoelectric applications.