Issue 2, 2012

Improvement of external quantum efficiency depressed by visible light-absorbing hole transport material in solid-state semiconductor-sensitized heterojunction solar cells

Abstract

A mesoporous (mp)-TiO2/Sb2S3/P3HT [poly(3-hexylthiophene)] heterojunction solar cell displays reduced external quantum efficiency (EQE) at a wavelength of approximately 650 nm. This loss in EQE is due to incomplete charge carrier transport because the transportation of charge carriers generated in P3HT by the absorption of light into Sb2S3 was inefficient, and consequently, the carriers recombined. The depression of the EQE was greatly relieved by introducing the porous structure formed by thermal decomposition of 2,2′-azobisisobutyronitrile (AIBN) into the P3HT layer.

Graphical abstract: Improvement of external quantum efficiency depressed by visible light-absorbing hole transport material in solid-state semiconductor-sensitized heterojunction solar cells

Supplementary files

Article information

Article type
Communication
Submitted
10 Oct 2011
Accepted
04 Nov 2011
First published
25 Nov 2011

Nanoscale, 2012,4, 429-432

Improvement of external quantum efficiency depressed by visible light-absorbing hole transport material in solid-state semiconductor-sensitized heterojunction solar cells

C. Lim, S. H. Im, J. A. Chang, Y. H. Lee, H. Kim and S. I. Seok, Nanoscale, 2012, 4, 429 DOI: 10.1039/C1NR11476J

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