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Issue 34, 2012
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Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

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Abstract

We report a solution processed high-k hafnium oxide (HfOx) dielectric used for a solution processed zinc-tin-oxide (ZTO) thin-film transistor (TFT) at the maximum process temperature of 300 °C. The HfOx is close to stoichiometric composition (35% hafnium and 65% oxygen), has no impurity related to the solvent or precursor used, and exhibits an amorphous structure. The HfOx is smooth enough, with a rms roughness of 0.33 nm, to be used as a gate insulator for TFT. The ZTO TFT with HfOx exhibits a threshold voltage of 1.18 V, a gate voltage swing of 105 mV per decade, and a field-effect mobility in the saturation region of 1.05 cm2 V−1 s−1. The resulting TFT properties are impacted by the formation of nanopores at the HfOx/ZTO interface and nanocrystals at the HfOx/IZO (source/drain) interface.

Graphical abstract: Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

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Publication details

The article was received on 14 May 2012, accepted on 29 Jun 2012 and first published on 26 Jul 2012


Article type: Communication
DOI: 10.1039/C2JM33054G
J. Mater. Chem., 2012,22, 17415-17420

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    Solution processed hafnium oxide as a gate insulator for low-voltage oxide thin-film transistors

    C. Avis, Y. G. Kim and J. Jang, J. Mater. Chem., 2012, 22, 17415
    DOI: 10.1039/C2JM33054G

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