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Issue 35, 2012
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High-performance CdSe nanobelt based MESFETs and their application in photodetection

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Abstract

High performance metal–semiconductor field-effect transistors (MESFETs) based on single n-CdSe nanobelts (NBs) have been fabricated and applied as photodetectors. Au is used as the gate metal, which formed a good Schottky contact with the CdSe NB with a rectification ratio of about 2 × 108. The CdSe NB MESFETs exhibit a near-zero threshold voltage (−0.55 V), low subthreshold swing (60.4 mV per dec), no clearly observed current hysteresis, and the highest on/off current ratio (5 × 108) reported so far for NW/NB MESFETs. We have also investigated the photoresponse properties of these MESFETs. Typical CdSe NB MESFET based photodetectors have high current responsivity (∼1.4 × 103 A W−1), high gain (∼2.7 × 103), and fast photoresponse speed (the rise time and the decay time are about 35 and 60 μs, respectively.) under a gate voltage of −1 V. All these results show that the CdSe NB based MESFETs can be promising candidates for both electronic and opto-electronic nanodevices.

Graphical abstract: High-performance CdSe nanobelt based MESFETs and their application in photodetection

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Publication details

The article was received on 08 May 2012, accepted on 18 Jul 2012 and first published on 20 Jul 2012


Article type: Paper
DOI: 10.1039/C2JM32890A
J. Mater. Chem., 2012,22, 18442-18446

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    High-performance CdSe nanobelt based MESFETs and their application in photodetection

    Y. Dai, B. Yu, Y. Ye, P. Wu, H. Meng, L. Dai and G. Qin, J. Mater. Chem., 2012, 22, 18442
    DOI: 10.1039/C2JM32890A

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