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Issue 36, 2012
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Crystalline indium sesquitelluride nanostructures: synthesis, growth mechanism and properties

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Abstract

In the present work, we report for the first time the growth of uniform single crystalline In2Te3 nanowires via the chemical vapor deposition (CVD) method. The CVD grown In2Te3 nanowires are single crystals along [132] growth direction with a uniform diameter of around 150 nm and an average length of tens of microns. In addition, polycrystalline hierarchical nanostructures of In2Te3 are also fabricated via a solvothermal method under low temperature conditions. The morphology and crystal structures are systematically studied using SEM and TEM. Optical characterization by Raman spectroscopy provides further information of the achieved products, and UV-vis spectroscopy helped to investigate the bandgap of these nanostructures. By surfactant and solvent effects, the morphologies of the nanostructure are controllable. The electrical properties of the two kinds of nanowire are compared. The morphology controllable nanostructure offers the possibility of controlling the properties of In2Te3 and this opens up new means for achieving high performance nanodevices based on these nanostructures.

Graphical abstract: Crystalline indium sesquitelluride nanostructures: synthesis, growth mechanism and properties

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Supplementary files

Article information


Submitted
12 Jun 2012
Accepted
02 Aug 2012
First published
02 Aug 2012

J. Mater. Chem., 2012,22, 19228-19235
Article type
Paper

Crystalline indium sesquitelluride nanostructures: synthesis, growth mechanism and properties

M. Safdar, Z. Wang, M. Mirza, C. Jiang and J. He, J. Mater. Chem., 2012, 22, 19228
DOI: 10.1039/C2JM33760F

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