Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 40, 2012
Previous Article Next Article

A first-principles study of II–VI (II = Zn; VI = O, S, Se, Te) semiconductor nanostructures

Author affiliations

Abstract

We present a systematic investigation of the structural, electronic and optical properties of wurtzite-like ZnX (X = O, S, Se, Te) nanostructures at the DFT/TDDFT level of theory. To provide a direct comparison with the experiment, realistic 1.0–1.5 nm quantum dots have been built up from the bulk. Low-lying computed excitation energies agree well with the available experimental data. The broad excitation profiles and narrow emission spectra typical of semiconductor quantum dots could be explained by the fact that the LUMO is the state accepting the electron of the low-lying TDDFT excitations calculated. Calculated binding energies for the Zn 3d shell have been found to be 0.5 eV lower than those of the corresponding bulk materials. Anion vacancies can explain the visible light emission of ZnX by introducing a trap state into the bandgap of the nanostructures, in agreement with previous theoretical and experimental works on ZnO. Calculations on rod- and sheet-like prototype clusters point to a significant quantum confinement effect on the optoelectronic properties of Zn-based nanomaterials.

Graphical abstract: A first-principles study of II–VI (II = Zn; VI = O, S, Se, Te) semiconductor nanostructures

Back to tab navigation

Supplementary files

Article information


Submitted
11 Jun 2012
Accepted
19 Aug 2012
First published
21 Aug 2012

J. Mater. Chem., 2012,22, 21453-21465
Article type
Paper

A first-principles study of II–VI (II = Zn; VI = O, S, Se, Te) semiconductor nanostructures

J. M. Azpiroz, I. Infante, X. Lopez, J. M. Ugalde and F. De Angelis, J. Mater. Chem., 2012, 22, 21453
DOI: 10.1039/C2JM33744D

Search articles by author

Spotlight

Advertisements