Memory devices based on functionalized copolymers exhibiting a linear dependence of switch threshold voltage with the pendant nitro-azobenzene moiety content change
Abstract
A nonvolatile nanoscale memory device based on pendent
* Corresponding authors
a
Key Laboratory of Organic Synthesis of Jiangsu Province, College of Chemistry, Chemical Engineering and Materials Science, Soochow University, Suzhou, Jiangsu 215123, China
E-mail:
lujm@suda.edu.cn
Fax: +86 512 65880367
Tel: +86 512 65880368
b Institute of Chemical Power Sources, Soochow University, Suzhou, Jiangsu 215006, China
A nonvolatile nanoscale memory device based on pendent
N. Fan, H. Liu, Q. Zhou, H. Zhuang, Y. Li, H. Li, Q. Xu, N. Li and J. Lu, J. Mater. Chem., 2012, 22, 19957 DOI: 10.1039/C2JM33426G
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content