Issue 30, 2012
From the journal:

Journal of Materials Chemistry

Evaluation of structure–property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance

Chang-Zhi Li,a   Chu-Chen Chueh,a   Hin-Lap Yip,ab   Jingyu Zou,a   Wen-Chang Chend  and  Alex K.-Y. Jen*abc  

* Corresponding authors

a Department of Materials Science and Engineering, University of Washington, Seattle, Washington 98195, USA
E-mail: ajen@u.washington.edu

b Advanced Materials for Energy Institute, University of Washington, Seattle, Washington 98195, USA

c Department of Chemistry, University of Washington, Seattle, Washington 98195, USA

d Department of Chemical Engineering and Institute of Polymer Science and Engineering, National Taiwan University, Taipei 106, Taiwan

Abstract

A series of fullerene acceptors have been selected for the systematic study of their electron-transporting properties on a standardized field-effect transistor (FET) platform. It was found that small structural alternations, functional patterns, and number of addends on fullerene derivatives strongly affect their mobilities. The measured charge mobilities correlate well with structural features of these materials and provide useful insights into designing better fullerene-based semiconductors for organic electronics.

Graphical abstract: Evaluation of structure–property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance

About
Cited by
Related
Download options Please wait...

Article information

DOI
https://doi.org/10.1039/C2JM32693K
Article type
Paper
Submitted
29 Apr 2012
Accepted
31 May 2012
First published
31 May 2012

J. Mater. Chem., 2012,22, 14976-14981

Permissions

Request permissions

Evaluation of structure–property relationships of solution-processible fullerene acceptors and their n-channel field-effect transistor performance

C. Li, C. Chueh, H. Yip, J. Zou, W. Chen and A. K.-Y. Jen, J. Mater. Chem., 2012, 22, 14976 DOI: 10.1039/C2JM32693K

To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.

If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.

If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.

Read more about how to correctly acknowledge RSC content.

Spotlight

Advertisements