Issue 17, 2012
From the journal:

Journal of Materials Chemistry

Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance†

Frederik Goethals,a   Ivan Ciofi,b   Oreste Madia,b   Kris Vanstreels,b   Mikhail R. Baklanov,b   Christophe Detavernier,c   Pascal Van Der Voorta  and  Isabel Van Driessche*a  

* Corresponding authors

a Department of Inorganic and Physical Chemistry, Ghent University, Krijgslaan 281, building S3, 9000 Ghent, Belgium
E-mail: isabel.vandriessche@ugent.be
Fax: +32 92644983
Tel: +32 92644433

b IMEC, Kapeldreef 75, 3001 Leuven, Belgium

c Department of Solid States Sciences, Ghent University, Krijgslaan 281, building S1, 9000 Ghent, Belgium

Abstract

Periodic mesoporous organosilicas (PMOs) are one of the most promising candidates to be used as ultra-low-k dielectrics in microelectronic devices. In this paper, PMO thin films that combine an ultra-low-k value, a hydrophobic property and a high resistance against aggressive chemical conditions are presented. The films are synthesized via spin-coating of a 1,1,3,3,5,5-hexaethoxy-1,3,5-trisilacyclohexane, hydrochloric acid, water and ethanol mixture using polyoxyethylene (10) stearyl ether as a porogen template. The obtained highly porous films are hydrophobic, crack-free and an ultra-low k-value of 1.8 is achieved. Finally, the chemical resistance of these PMO films against alkaline solutions is investigated in detail and compared with the resistance of mesoporous silicas and PMOs synthesized with cetyl trimethylammonium chloride.

Graphical abstract: Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance

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Article information

DOI
https://doi.org/10.1039/C2JM30312D
Article type
Paper
Submitted
16 Jan 2012
Accepted
16 Feb 2012
First published
21 Feb 2012

J. Mater. Chem., 2012,22, 8281-8286

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Ultra-low-k cyclic carbon-bridged PMO films with a high chemical resistance

F. Goethals, I. Ciofi, O. Madia, K. Vanstreels, M. R. Baklanov, C. Detavernier, P. Van Der Voort and I. Van Driessche, J. Mater. Chem., 2012, 22, 8281 DOI: 10.1039/C2JM30312D

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