Issue 22, 2012
From the journal:

Journal of Materials Chemistry

Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment†

Bong Seob Yang,a   Sanghyun Park,a   Seungha Oh,a   Yoon Jang Kim,a   Jae Kyeong Jeong,*b   Cheol Seong Hwanga  and  Hyeong Joon Kim*a  

* Corresponding authors

a WCU Hybrid Materials Program, Department of Materials Science and Engineering, Inter-university Semiconductor Research Center, Seoul National University, Seoul 151-744, Korea
E-mail: thinfilm@snu.ac.kr

b Department of Materials Science and Engineering, Inha University, Incheon 402-751, Korea
E-mail: jkjeong@inha.ac.kr

Abstract

Highly improved negative bias illumination stress stability was achieved in a Zn–Sn–O field effect transistor after an ozone (O3) treatment. The untreated ZTO FET exhibited a huge negative threshold voltage shift of 4.2 V but the O3 treated device exhibited superior stability under NBIS conditions: the Vth value of the O3 treated ZTO FET for 600 s showed almost no change (ΔVth = −0.07 V) under the same NBIS. The improvement in NBIS stability of the O3 treated ZTO FETs was attributed to the lower oxygen vacancy concentration and retarded desorption of adsorbed oxygen under photon irradiation by the O3 treatment.

Graphical abstract: Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment

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Article information

DOI
https://doi.org/10.1039/C2JM30242J
Article type
Communication
Submitted
13 Jan 2012
Accepted
03 Apr 2012
First published
19 Apr 2012

J. Mater. Chem., 2012,22, 10994-10998

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Improvement of the photo-bias stability of the Zn–Sn–O field effect transistors by an ozone treatment

B. S. Yang, S. Park, S. Oh, Y. J. Kim, J. K. Jeong, C. S. Hwang and H. J. Kim, J. Mater. Chem., 2012, 22, 10994 DOI: 10.1039/C2JM30242J

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