Issue 14, 2012

Preparation of photoactive ZnGeP2nanowire films

Abstract

Photoactive ZnGeP2 nanowires have been prepared by solid-source sublimation chemical vapor deposition using Sn catalysts. Nanowire films with areas >0.5 cm2 on Si(100) and Si(111) substrates were deposited with variable nanowire length and diameter. Transmission electron microscopy (TEM), scanning TEM (STEM), and polarized Raman microscopy indicated nanowires exhibited single-crystal character and compositional homogeneity. Photoelectrochemical measurements performed in an aqueous electrolyte indicated the as-prepared ZnGeP2 nanowires were p-type and capable of passing sustained cathodic photocurrents under white light illumination. The presented results identify a straight-forward approach to the preparation of II–IV–V2 nanowire films with features suitable for optical and photoelectrochemical energy conversion/storage applications.

Graphical abstract: Preparation of photoactive ZnGeP2 nanowire films

Supplementary files

Article information

Article type
Paper
Submitted
08 Dec 2011
Accepted
13 Feb 2012
First published
24 Feb 2012

J. Mater. Chem., 2012,22, 6613-6622

Preparation of photoactive ZnGeP2 nanowire films

S. M. Collins, J. M. Hankett, A. I. Carim and S. Maldonado, J. Mater. Chem., 2012, 22, 6613 DOI: 10.1039/C2JM16453A

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