Electrical annealing and temperature dependent transversal conduction in multilayer reduced graphene oxide films for solid-state molecular devices†
Abstract
The transversal conductance through thin multi-layered films of reduced graphene oxide was studied as a function of temperature in a solid-state device setup designed for molecular electronic measurements. Upon cooling to cryogenic temperatures, the resistivity of the films increased by about three orders of magnitude compared to the value at room temperature, and this temperature dependence was described by a variable range hopping model. Above a certain threshold voltage the films could be annealed electrically at low temperatures. This electrical
- This article is part of the themed collection: Organic electronics - new physical chemistry insight