Improved ambient operation of n-channel organic transistors of solution-sheared naphthalene diimide under bias stress†
Abstract
Large arrays of n-channel organic thin film transistors of a core-chlorinated naphthalene diimide were processed by solution shearing on a silicon dioxide dielectric exhibiting ambient stable electron mobilities of up to 0.95 cm2 V−1 s−1. Under bias stress an increase in effective charge carrier mobility of up to 4.26 cm2 V−1 s−1 has been observed.
- This article is part of the themed collection: Organic electronics - new physical chemistry insight