Considerations on ultra-high frequency electric field effects on oxygen vacancy concentration in oxide thin films
Abstract
Atomistic simulations employing dynamic charge transfer between atoms are used to investigate ultra-thin
* Corresponding authors
a
Center for Nanoscale Materials, Argonne National Laboratory, Argonne, USA
E-mail:
skrssank@anl.gov
b Nuclear Engineering Division Argonne National Laboratory, Argonne, IL 60439, USA
c Harvard School of Engineering and Applied Sciences, Harvard University, Cambridge, MA 02138, USA
Atomistic simulations employing dynamic charge transfer between atoms are used to investigate ultra-thin
S. K. R. S. Sankaranarayanan, R. Subbaraman and S. Ramanathan, Phys. Chem. Chem. Phys., 2012, 14, 3360 DOI: 10.1039/C2CP22696K
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