Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I

Quanxi Bao; Hiromi Sawayama; Takanori Hashimoto; Fukuma Sato; Kouji Hazu; Yuji Kagamitani; Takayuki Ishinabe; Makoto Saito; Rinzo Kayano; Daisuke Tomida; Kun Qiao; Shigefusa F. Chichibu; Chiaki Yokoyama; Tohru Ishiguro

doi:10.1039/C2CE06669F

Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH₄I

Quanxi Bao,^a Hiromi Sawayama,^a Takanori Hashimoto,^a Fukuma Sato,^a Kouji Hazu,^a Yuji Kagamitani,^b Takayuki Ishinabe,^b Makoto Saito,^b Rinzo Kayano,^c Daisuke Tomida,^a Kun Qiao,*^a Shigefusa F. Chichibu,^a Chiaki Yokoyama^a and Tohru Ishiguro^a

Author affiliations

* Corresponding authors

^a Institute of Multidisciplinary Research for Advanced Materials, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577, Japan
E-mail: kunqiao@tagen.tohoku.ac.jp
Fax: +81 022 217 5647
Tel: +81 022 217 5647

^b Mitsubishi Chemical Corp., 1000 Higashi-Mamiana, Ushiku, Ibaraki 300-1295, Japan

^c Muroran Research Laboratory, The Japan Steel Works, Ltd., Muroran 051-8505, Japan

Abstract

An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH₄I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.

CrystEngComm

Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH₄I

Abstract

Article information

Download Citation

Permissions

Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH₄I

Social activity

Search articles by author

Spotlight

Advertisements