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Issue 10, 2012
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Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I

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Abstract

An efficient and mild method to synthesize high-purity hexagonal GaN powder using NH4I as a catalyst was developed. The method makes it possible to use Ga metal for ammonothermal crystal growth of GaN at a rate of 20 μm per day, which is comparable to its growth rate using polycrystalline GaN grown by hydride vapor phase epitaxy as a nutrient.

Graphical abstract: Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I

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Publication details

The article was received on 13 Dec 2011, accepted on 13 Feb 2012 and first published on 14 Feb 2012


Article type: Communication
DOI: 10.1039/C2CE06669F
Citation: CrystEngComm, 2012,14, 3351-3354

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    Powder synthesis and ammonothermal crystal growth of GaN from metallic Ga in the presence of NH4I

    Q. Bao, H. Sawayama, T. Hashimoto, F. Sato, K. Hazu, Y. Kagamitani, T. Ishinabe, M. Saito, R. Kayano, D. Tomida, K. Qiao, S. F. Chichibu, C. Yokoyama and T. Ishiguro, CrystEngComm, 2012, 14, 3351
    DOI: 10.1039/C2CE06669F

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