Issue 21, 2012
From the journal:

CrystEngComm

A novel approach for controlled oriented growth of non-polar m-plane ZnO thin films via low temperature chemical solution route†

M. Babar Shahzad,a   Hong Lu,a   Peng Wanga  and  Yang Qi*ab  

* Corresponding authors

a Institute of Materials Physics and Chemistry, School of Sciences, Northeastern University, Shenyang, People's Republic of China
E-mail: qiyang@imp.neu.edu.cn
Fax: +86-24-83683674
Tel: +86-24-83683674

b Key Laboratory for Anisotropy and Texture of Materials, Ministry of Education, Northeastern University, Shenyang 110819, People's Republic of China

Abstract

We report a successful synthesis of high quality non-polar m-plane (10[1 with combining macron]0) ZnO thin films via a novel and facile two step solution growth method. The reproducible growth of polarity free films is achieved by manipulating the seed/substrate characteristics, solution chemistry and growth conditions. Based on time resolved growth reaction FESEM analysis, three step growth phenomena viz. dissolution, recrystallization & primary growth and in situ nucleation/crystallization & secondary growth is proposed and explained.

Graphical abstract: A novel approach for controlled oriented growth of non-polar m-plane ZnO thin films via low temperature chemical solution route

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Article information

DOI
https://doi.org/10.1039/C2CE26125A
Article type
Communication
Submitted
10 Jul 2012
Accepted
13 Aug 2012
First published
13 Aug 2012

CrystEngComm, 2012,14, 7123-7126

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A novel approach for controlled oriented growth of non-polar m-plane ZnO thin films via low temperature chemical solution route

M. B. Shahzad, H. Lu, P. Wang and Y. Qi, CrystEngComm, 2012, 14, 7123 DOI: 10.1039/C2CE26125A

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