Issue 24, 2012
From the journal:

CrystEngComm

Morphology controlled synthesis of crystalline ZnO film by MOCVD: from hexagon to rhombus†

Jingchuan Yang,a   Yanli Pei,*ab   Ruiqing Hu,a   Bingfeng Fan,a   Cunsheng Tong,a   Toshiya Kojima,c   Zhisheng Wu,a   Hao Jianga  and  Gang Wang*a  

* Corresponding authors

a State Key Lab of Optoelectronics Materials & Technologies, School of Physics & Engineering, Sun Yat-Sen University, Guangzhou 510275, P. R. China
E-mail: stswangg@mail.sysu.edu.cn, peiyanli@mail.sysu.edu.cn
Fax: +86-020-39943836
Tel: +86-020-39943836 ext.8003

b State Key Laboratory of Silicon Materials, Zhejiang University, Hangzhou 310027, P. R. China

c Technical Division, School of Engineering, Tohoku University, Sendai 980-8579, Japan

Abstract

We grew crystalline ZnO films by non-catalyst metalorganic chemical vapor deposition. Through adjusting the mass flow rate of the diethylzinc source, the morphology of the crystalline ZnO film can be easily manipulated from hexagon to rhombus. The possible mechanism is the growth rate anisotropy, which is confirmed by FE-SEM, XRD, and TEM measurements.

Graphical abstract: Morphology controlled synthesis of crystalline ZnO film by MOCVD: from hexagon to rhombus

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Article information

DOI
https://doi.org/10.1039/C2CE26024G
Article type
Communication
Submitted
27 Jun 2012
Accepted
02 Oct 2012
First published
04 Oct 2012

CrystEngComm, 2012,14, 8345-8348

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Morphology controlled synthesis of crystalline ZnO film by MOCVD: from hexagon to rhombus

J. Yang, Y. Pei, R. Hu, B. Fan, C. Tong, T. Kojima, Z. Wu, H. Jiang and G. Wang, CrystEngComm, 2012, 14, 8345 DOI: 10.1039/C2CE26024G

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