p-CdTe nanoribbon/n-silicon nanowires array heterojunctions: photovoltaic devices and zero-power photodetectors

Abstract

Nano-heterojunction composed of single Sb-doped p-type CdTe nanoribbon (CdTeNR) and n-type silicon nanowires (SiNWs) array was successfully fabricated. The p–n heterojunction exhibited excellent rectifying behavior with a rectification ratio of 10⁵ at ±2 V in the dark. Due to the matched band gap of CdTeNR with SiNWs, as well as the efficient light absorption of the SiNWs array, pronounced photovoltaic characteristics with energy conversion efficiency up to 2.1% under AM 1.5 G was achieved. Furthermore, the heterojunction device could serve as high-performance zero-power photodetector operated in the visible to near-infrared (NIR) range with good stability, high sensitivity, and fast response speed. It is expected that the p-CdTeNR/n-SiNWs array heterojunctions will find important applications in future nano-optoelectronic devices.