Issue 14, 2012

Growth and characterization of CsB3O5 crystals without scattering centers

Abstract

CsB3O5 (CBO) single crystals without scattering centers have been successfully grown from the Cs2O–B2O3–MoO3 ternary system by the top-seeded solution growth method. The suitable region for CBO crystal growth was investigated by growth experiments, viscosity and volatility measurements, which confirmed that the optimal molar ratio of Cs2O : B2O3 : MoO3 was 2 : 3 : 2.5. By carefully controlling growth parameters, including the temperature gradient in the axis, rotation rate, cooling rate, and seed direction, a free of scattering centers CBO crystal with dimensions up to 29 × 31 × 47 mm3 has been obtained. The grown CBO crystals possess high optical quality. The full-width at half-maximum (FWHM) of the rocking curve is 0.0057°, and the optical homogeneity is at the level of 10−6 cm−1. The optical absorption at the critical wavelengths of 1064 and 532 nm was measured to be 200 and 60 ppm cm−1, respectively. The laser-induced damage threshold (LIDT) at λ = 1.064 nm and τ = 5.0 ns is about 4.50 GW cm−2. Moreover, a high-power 278 nm ultraviolet (UV) laser through fourth harmonic generation (FOHG) of a diode-pumped 1112 nm Nd:YAG laser has been demonstrated in CBO crystal for the first time.

Graphical abstract: Growth and characterization of CsB3O5 crystals without scattering centers

Article information

Article type
Paper
Submitted
26 Jan 2012
Accepted
05 Apr 2012
First published
10 Apr 2012

CrystEngComm, 2012,14, 4738-4744

Growth and characterization of CsB3O5 crystals without scattering centers

S. Liu, G. Zhang, X. Li, F. Yang, Y. Bo, P. Fu and Y. Wu, CrystEngComm, 2012, 14, 4738 DOI: 10.1039/C2CE25122A

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