Synthesis of well-aligned SnO2nanowires with branches on r-cut sapphire substrate

Abstract

Well-aligned single crystal SnO₂ nanowires were epitaxially grown on r-cut sapphire substrate viaAu-catalyzed vapor–liquid–solid (VLS) growth, and their hetero-epitaxial relationships were determined by pole figure and high resolution transmission electron microscopy (HRTEM). In addition, the growth of branched nanowires by homo-epitaxy was demonstrated in one step without a multiple catalyst deposition.