Inclined and ordered ZnO nanowire arrays developed on non-polar ZnO seed-layer films
Abstract
Inclined and ordered ZnO 0) seed layer films, while ZnO
1) facets of seed crystals by stacking misfit dislocations with a twist angle of 3.6°.
* Corresponding authors
a
State Key Laboratory of Silicon Materials, Department of Materials, Zhejiang University, Hangzhou, People's Republic of China
E-mail:
lujianguo@zju.edu.cn, yezz@zju.edu.cn.
Fax: +86-571-8795 2625
Tel: +86-571-8795 2187
b National Center of Testing Technology, Shanghai, People's Republic of China
Inclined and ordered ZnO 0) seed layer films, while ZnO
1) facets of seed crystals by stacking misfit dislocations with a twist angle of 3.6°.
H. Zhang, J. Lu, X. Yang, Z. Ye, J. Huang, B. Lu, L. Hu, Y. Li, Y. Zhang and D. Li, CrystEngComm, 2012, 14, 4501 DOI: 10.1039/C2CE00001F
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