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Issue 75, 2012
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Controlling volatility in solid-state, redox-based memory devices using heterojunction barriers to ion transport

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Abstract

In this work, we show the ability to tune the volatility of redox-based memory by designing barriers to ion drift. By changing the nature and properties of the barrier material, the key performance metric (ratio of retention time to read/write time) could be altered to yield ratios in the range of 1 to 109.

Graphical abstract: Controlling volatility in solid-state, redox-based memory devices using heterojunction barriers to ion transport

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Supplementary files

Article information


Submitted
25 Jun 2012
Accepted
30 Jul 2012
First published
02 Aug 2012

Chem. Commun., 2012,48, 9409-9411
Article type
Communication

Controlling volatility in solid-state, redox-based memory devices using heterojunction barriers to ion transport

M. Ramesh Kumar, G. M. A. Rahman, D. J. Thomson and M. S. Freund, Chem. Commun., 2012, 48, 9409
DOI: 10.1039/C2CC34557A

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