Issue 80, 2012

A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors

Abstract

A simple nickel bis(dithiolene) complex has been developed as an excellent n-type molecular semiconductor for FETs, with an electron mobility of 0.11 cm2 V−1 s−1 and an on/off ratio of 2 × 106 despite its small π-conjugated system. Good FET stability in ambient conditions has also been observed.

Graphical abstract: A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors

Supplementary files

Article information

Article type
Communication
Submitted
13 May 2012
Accepted
11 Jul 2012
First published
11 Jul 2012

Chem. Commun., 2012,48, 9965-9967

A simple nickel bis(dithiolene) complex as an excellent n-type molecular semiconductor for field-effect transistors

L. Qu, Y. Guo, H. Luo, C. Zhong, G. Yu, Y. Liu and J. Qin, Chem. Commun., 2012, 48, 9965 DOI: 10.1039/C2CC33445C

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