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Issue 30, 2011
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Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device

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Abstract

A ladder polysilsesquioxane with side chain 3-methyl-1,5-diphenylbenzene groups (Tp-LPSQ) is synthesized successfully and confirmed by the MALDI-TOF MS, 29Si-NMR and 1H-NMR. DSC, TGA, AFM and PL spectra reveal its good film-forming property, high thermal and morphological stability and good miscibility to the dopant FIrpic. In addition, it also shows a high triplet energy and a wide bandgap. Thus Tp-LPSQ may act as a host for the blue light emitting iridium complex FIrpic. The electrophosphorescent device based on Tp-LPSQ as the active layer exhibits typical blue emission and the performance of device is superior to other reported polymeric host materials.

Graphical abstract: Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device

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Publication details

The article was received on 13 Mar 2011, accepted on 04 May 2011 and first published on 17 Jun 2011


Article type: Paper
DOI: 10.1039/C1JM11087J
Citation: J. Mater. Chem., 2011,21, 11306-11311
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    Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device

    Z. Ren, Z. Chen, W. Fu, R. Zhang, F. Shen, F. Wang, Y. Ma and S. Yan, J. Mater. Chem., 2011, 21, 11306
    DOI: 10.1039/C1JM11087J

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