Issue 30, 2011
From the journal:

Journal of Materials Chemistry

Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device†

Zhongjie Ren,a   Zhize Chen,b   Wenxin Fu,b   Rongben Zhang,b   Fangzhong Shen,c   Feng Wang,a   Yuguang Ma*c  and  Shouke Yan*a  

* Corresponding authors

a State Key laboratory of Chemical Resource Engineering, Beijing University of Chemical Technology, Beijing, China
E-mail: skyan@mail.buct.edu.cn
Fax: +861064455928
Tel: +861064455928

b Laboratory of Polymer Science and Material, Beijing National Laboratory for Molecular Sciences (BNLMS), Institute of Chemistry, Chinese Academy of Sciences, Beijing, China

c State Key Lab for supramolecular structures and materials, Jilin University, Changchun, China
E-mail: ygma@jlu.edu.cn

Abstract

A ladder polysilsesquioxane with side chain 3-methyl-1,5-diphenylbenzene groups (Tp-LPSQ) is synthesized successfully and confirmed by the MALDI-TOF MS, 29Si-NMR and 1H-NMR. DSC, TGA, AFM and PL spectra reveal its good film-forming property, high thermal and morphological stability and good miscibility to the dopant FIrpic. In addition, it also shows a high triplet energy and a wide bandgap. Thus Tp-LPSQ may act as a host for the blue light emitting iridium complex FIrpic. The electrophosphorescent device based on Tp-LPSQ as the active layer exhibits typical blue emission and the performance of device is superior to other reported polymeric host materials.

Graphical abstract: Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device

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Article information

DOI
https://doi.org/10.1039/C1JM11087J
Article type
Paper
Submitted
13 Mar 2011
Accepted
04 May 2011
First published
17 Jun 2011

J. Mater. Chem., 2011,21, 11306-11311

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Ladder polysilsesquioxane for wide-band semiconductors: synthesis, optical properties and doped electrophosphorescent device

Z. Ren, Z. Chen, W. Fu, R. Zhang, F. Shen, F. Wang, Y. Ma and S. Yan, J. Mater. Chem., 2011, 21, 11306 DOI: 10.1039/C1JM11087J

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