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Issue 9, 2011
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Charge transport in graphene–polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

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Abstract

Blends of reduced graphene oxide (RGO) and poly(3-hexylthiophene) (P3HT) are used as the active layer of field-effect transistors (FETs). By using sequential deposition of the two components, the density of RGO sheets can be tuned linearly, thereby modulating their contribution to the charge transport in the transistors, and the onset of charge percolation. The surface potential of RGO, P3HT and source–drain contacts is measured on the nanometric scale with Kelvin Probe Force Microscopy (KPFM), and correlated with the macroscopic performance of the FETs. KPFM is also used to monitor the potential decay along the channel in the working FETs.

Graphical abstract: Charge transport in graphene–polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

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Publication details

The article was received on 04 Sep 2010, accepted on 06 Dec 2010 and first published on 18 Jan 2011


Article type: Paper
DOI: 10.1039/C0JM02940H
Citation: J. Mater. Chem., 2011,21, 2924-2931
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    Charge transport in graphene–polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

    A. Liscio, G. P. Veronese, E. Treossi, F. Suriano, F. Rossella, V. Bellani, R. Rizzoli, P. Samorì and V. Palermo, J. Mater. Chem., 2011, 21, 2924
    DOI: 10.1039/C0JM02940H

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