Jump to main content
Jump to site search
Access to RSC content Close the message box

Continue to access RSC content when you are not at your institution. Follow our step-by-step guide.


Issue 9, 2011
Previous Article Next Article

Charge transport in graphene–polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

Author affiliations

Abstract

Blends of reduced graphene oxide (RGO) and poly(3-hexylthiophene) (P3HT) are used as the active layer of field-effect transistors (FETs). By using sequential deposition of the two components, the density of RGO sheets can be tuned linearly, thereby modulating their contribution to the charge transport in the transistors, and the onset of charge percolation. The surface potential of RGO, P3HT and source–drain contacts is measured on the nanometric scale with Kelvin Probe Force Microscopy (KPFM), and correlated with the macroscopic performance of the FETs. KPFM is also used to monitor the potential decay along the channel in the working FETs.

Graphical abstract: Charge transport in graphene–polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

Back to tab navigation

Supplementary files

Article information


Submitted
04 Sep 2010
Accepted
06 Dec 2010
First published
18 Jan 2011

J. Mater. Chem., 2011,21, 2924-2931
Article type
Paper

Charge transport in graphene–polythiophene blends as studied by Kelvin Probe Force Microscopy and transistor characterization

A. Liscio, G. P. Veronese, E. Treossi, F. Suriano, F. Rossella, V. Bellani, R. Rizzoli, P. Samorì and V. Palermo, J. Mater. Chem., 2011, 21, 2924
DOI: 10.1039/C0JM02940H

Search articles by author

Spotlight

Advertisements