Control of epitaxy of graphene by crystallographic orientation of a Si substrate toward device applications
Abstract
* Corresponding authors
a
Research Institute of Electrical Communications, Tohoku University, Sendai, Japan
E-mail:
fukidome@riec.tohoku.ac.jp
b CREST, Japan Science and Technology Agency, Tokyo, Japan
c Graduate School of Science and Technology, Hirosaki University, Aomori, Japan
d Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, Japan
e JASRI/SPring-8, 1-1-1 Kouto, Sayo-cho, Sayo-gun, Hyogo, Japan
H. Fukidome, R. Takahashi, S. Abe, K. Imaizumi, H. Handa, H.-C. Kang, H. Karasawa, T. Suemitsu, T. Otsuji, Y. Enta, A. Yoshigoe, Y. Teraoka, M. Kotsugi, T. Ohkouchi, T. Kinoshita and M. Suemitsu, J. Mater. Chem., 2011, 21, 17242 DOI: 10.1039/C1JM12921J
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