Vertically aligned In2O3 nanorods on FTO substrates for photoelectrochemical applications

Jiayong Gan; Xihong Lu; Teng Zhai; Yufeng Zhao; Shilei Xie; Yanchao Mao; Yueli Zhang; Yangyi Yang; Yexiang Tong

doi:10.1039/C1JM11774B

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Vertically aligned In₂O₃nanorods on FTO substrates for photoelectrochemical applications†

Jiayong Gan,^a Xihong Lu,^a Teng Zhai,^a Yufeng Zhao,^a Shilei Xie,^a Yanchao Mao,^a Yueli Zhang,^b Yangyi Yang*^a and Yexiang Tong*^a

Author affiliations

* Corresponding authors

^a KLGHEI of Environment and Energy Chemistry, MOE Laboratory of Bioinorganic and Synthetic Chemistry, School of Chemistry and Chemical Engineering, Institute of Optoelectronic and Functional Composite Materials, Sun Yat-sen University, Guangzhou, P. R. China
E-mail: chedhx@mail.sysu.edu.cn, cesyyy@mail.sysu.edu.cn
Fax: +86 20 84112245
Tel: +86 20 84110071

^b School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, P. R. China

Abstract

Vertically aligned In₂O₃ nanorod arrays (NRAs) were obtained by annealing the as-prepared In(OH)₃ precursors that grew directly on FTO substrates via a simple template-free electrochemical assembly process. The absorption edges of In₂O₃ NRAs show a red-shift to the visible region, and a remarkable photocurrent response under visible light illumination (λ ≥ 390 nm) in photoelectrochemical cells.

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Article information

DOI: https://doi.org/10.1039/C1JM11774B
Article type: Paper
Submitted: 22 Apr 2011
Accepted: 09 Jul 2011
First published: 15 Aug 2011

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J. Mater. Chem., 2011,21, 14685-14692

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Vertically aligned In₂O₃ nanorods on FTO substrates for photoelectrochemical applications

J. Gan, X. Lu, T. Zhai, Y. Zhao, S. Xie, Y. Mao, Y. Zhang, Y. Yang and Y. Tong, J. Mater. Chem., 2011, 21, 14685 DOI: 10.1039/C1JM11774B

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Journal of Materials Chemistry