Low-temperature rapid synthesis of high-quality pristine or boron-doped graphenevia Wurtz-type reductive coupling reaction†
Abstract
High-quality C– and the layer growth of hexagonal carbon clusters to form
* Corresponding authors
a
CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, P.R. China
E-mail:
huangfq@mail.sic.ac.cn
Fax: +86-21-5241-6360
Tel: +86-21-5241-1620
b Graduate School of the Chinese Academy of Sciences, Beijing, P.R. China
c State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai, P.R. China
High-quality C– and the layer growth of hexagonal carbon clusters to form
X. Lü, J. Wu, T. Lin, D. Wan, F. Huang, X. Xie and M. Jiang, J. Mater. Chem., 2011, 21, 10685 DOI: 10.1039/C1JM11184A
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