Issue 9, 2011
From the journal:

Journal of Materials Chemistry

Low-threshold electrically pumped ultraviolet laser diode

Hai Zhu,ab   Chong-Xin Shan,*a   Bing-Hui Li,a   Z. Z. Zhang,a   De-Zhen Shena  and  Kwang-Leong Choyc  

* Corresponding authors

a Key Lab of Excited State Processes, Changchun Institute of Optics, Fine Mechanics and Physics, Chinese Academy of Sciences, Changchun, China
E-mail: phycxshan@yahoo.com.cn

b Graduate School of the Chinese Academy of Sciences, Beijing, China

c School of Mechanical Materials, Manufacturing Engineering, The University of Nottingham, University Park, Nottingham, United Kingdom

Abstract

Electrically pumped ultraviolet lasing has been realized in a Au/MgO/MgZnO/n-ZnO structure. The lasing is located at around 330 nm. Notably the threshold of the lasing is about 30.0 mA, over one order of magnitude smaller than the corresponding values reported before.

Graphical abstract: Low-threshold electrically pumped ultraviolet laser diode

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Article information

DOI
https://doi.org/10.1039/C0JM04233A
Article type
Communication
Submitted
04 Dec 2010
Accepted
11 Jan 2011
First published
24 Jan 2011

J. Mater. Chem., 2011,21, 2848-2851

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Low-threshold electrically pumped ultraviolet laser diode

H. Zhu, C. Shan, B. Li, Z. Z. Zhang, D. Shen and K. Choy, J. Mater. Chem., 2011, 21, 2848 DOI: 10.1039/C0JM04233A

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