Jump to main content
Jump to site search
PLANNED MAINTENANCE Close the message box

Scheduled maintenance work on Wednesday 22nd May 2019 from 11:00 AM to 1:00 PM (GMT).

During this time our website performance may be temporarily affected. We apologise for any inconvenience this might cause and thank you for your patience.


Issue 8, 2011
Previous Article Next Article

Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate

Author affiliations

Abstract

A new GaN lateral epitaxial overgrowth (LEO) technique using a chemical-etched grooved sapphire substrate is demonstrated here. The substrate fabrication, selective growth mechanism and dislocation reduction mechanism are discussed. By applying this technique, improvement in the quality of wing tilt free GaN LEO films and enhancement of GaN LEDs can be achieved.

Graphical abstract: Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate

Back to tab navigation

Publication details

The article was received on 19 Dec 2010, accepted on 19 May 2011 and first published on 08 Jul 2011


Article type: Review Article
DOI: 10.1039/C0EE00792G
Energy Environ. Sci., 2011,4, 2625-2629

  •   Request permissions

    Recent progress of GaN growth on maskless chemical-etched grooved sapphire substrate

    Y. Jiang, H. Jia, W. Wang, L. Wang and H. Chen, Energy Environ. Sci., 2011, 4, 2625
    DOI: 10.1039/C0EE00792G

Search articles by author

Spotlight

Advertisements