Electronic and magnetic properties of perfect, vacancy-doped, and nonmetal adsorbed MoSe2, MoTe2 and WS2 monolayers

Abstract

Very recently, two-dimensional nanosheets of MoSe₂, MoTe₂ and WS₂ were successfully synthesized experimentally [Science, 2011, 331, 568]. In the present work, the electronic and magnetic properties of perfect, vacancy-doped, and nonmetal element (H, B, C, N, O, and F) adsorbed MoSe₂, MoTe₂ and WS₂ monolayers are systematically investigated by means of first-principles calculations to give a detailed understanding of these materials. It is found that: (1) MoSe₂, MoTe₂ and WS₂ exhibit surprising confinement-induced indirect-direct-gap crossover; (2) among all the neutral native vacancies of MoSe₂, MoTe₂ and WS₂ monolayers, only the Mo vacancy in MoSe₂ can induce spin-polarization and long-range antiferromagnetic coupling; (3) adsorption of nonmetal elements on the surface of MoSe₂, MoTe₂ and WS₂ nanosheets can induce a local magnetic moment; H-absorbed WS₂, MoSe₂, and MoTe₂ monolayers and F-adsorbed WS₂ and MoSe₂ monolayers show long-range antiferromagnetic coupling between local moments even when their distance is as long as ∼12 Å. These findings are a useful addition to the experimental studies of these new synthesized two-dimensional nanosheets, and suggest a new route to facilitate the design of spintronic devices for complementing graphene. Further experimental studies are expected to confirm the attractive predictions.