Issue 34, 2011
From the journal:

Physical Chemistry Chemical Physics

The electronic and structural properties of novel organomodified Si nanosheets

Michelle J. S. Spencer,ab   Tetsuya Morishita,*c   Masuhiro Mikami,c   Ian K. Snook,a   Yusuke Sugiyama†d  and  Hideyuki Nakanod  

* Corresponding authors

a Applied Physics, School of Applied Sciences, RMIT University, Melbourne, Victoria 3001, Australia

b Department of Chemistry, La Trobe Institute for Molecular Science, La Trobe University, Bundoora, Victoria 3086, Australia (present address)

c Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan
E-mail: t-morishita@aist.go.jp
Web: http://staff.aist.go.jp/t-morishita/

d Toyota Central R&D Labs., Inc., 41-1 Yokomichi, Nagakute, Aichi 480-1192, Japan

Abstract

We show that the properties of a new class of functional materials, silicon nanosheets modified with phenyl groups and H atoms, are highly promising for applications such as electronic devices. This novel material retains the sp3 structure after functionalisation, resulting in a wide (direct) band gap of 1.92 eV.

Graphical abstract: The electronic and structural properties of novel organomodified Si nanosheets

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Article information

DOI
https://doi.org/10.1039/C1CP21544B
Article type
Communication
Submitted
13 May 2011
Accepted
28 Jun 2011
First published
18 Jul 2011

Phys. Chem. Chem. Phys., 2011,13, 15418-15422

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The electronic and structural properties of novel organomodified Si nanosheets

M. J. S. Spencer, T. Morishita, M. Mikami, I. K. Snook, Y. Sugiyama and H. Nakano, Phys. Chem. Chem. Phys., 2011, 13, 15418 DOI: 10.1039/C1CP21544B

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