Issue 38, 2011

Generation of clean iron nanocrystals on an ultra-thin SiOx film on Si(001)

Abstract

Upon exposure to Fe(CO)5, the formation of pure cubic Fe nanocrystals with dimensions up to ∼75 nm is reported on ultra-thin SiOx films (thickness ≈ 0.5 nm) on Si(001), which have been prepared in situ under UHV conditions. The active centers for initial decomposition of Fe(CO)5 resulting in the growth of the Fe clusters are proposed to be SiO sites. After nucleation at these sites, further crystal growth is observed due to autocatalytic dissociation of Fe(CO)5 at room temperature. The density of the Fe clusters can be increased by irradiating the surface with a focused electron beam (15 keV) prior to gas exposure. The formation of the active SiO sites upon electron irradiation is attributed to oxygen desorption via the Knotek–Feibelman mechanism.

Graphical abstract: Generation of clean iron nanocrystals on an ultra-thin SiOx film on Si(001)

Supplementary files

Article information

Article type
Paper
Submitted
22 Mar 2011
Accepted
02 Aug 2011
First published
31 Aug 2011

Phys. Chem. Chem. Phys., 2011,13, 17333-17338

Generation of clean iron nanocrystals on an ultra-thin SiOx film on Si(001)

M. Walz, F. Vollnhals, M. Schirmer, H. Steinrück and H. Marbach, Phys. Chem. Chem. Phys., 2011, 13, 17333 DOI: 10.1039/C1CP20865A

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