Uncovering the role of the ZnS treatment in the performance of quantum dot sensitized solar cells†
Abstract
Among the third-generation photovoltaic devices, much attention is being paid to the so-called
* Corresponding authors
a
Institut Universitari d'Electroquímica i Departament de Química Física, Universitat d'Alacant, Apartat 99, E-03080 Alacant, Spain
E-mail:
nestor.guijarro@ua.es, roberto.gomez@ua.es
Fax: +34 965903537
Tel: +34 965903748
b Department of Engineering Science, Faculty of Informatics and Engineering, The University of Electro Communications, 1-5-1 Chofugaoka, Chofu, Tokyo 182-8585, Japan
c PRESTO, Japan Science and Technology Agency (JST), 4-1-8 Honcho Kawaguchi, Saitama 332-0012, Japan
Among the third-generation photovoltaic devices, much attention is being paid to the so-called
N. Guijarro, J. M. Campiña, Q. Shen, T. Toyoda, T. Lana-Villarreal and R. Gómez, Phys. Chem. Chem. Phys., 2011, 13, 12024 DOI: 10.1039/C1CP20290A
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