Intrinsic defects and dopants in LiNH2: a first-principles study†
Abstract
The
* Corresponding authors
a
Radboud University Nijmegen, Institute for Molecules and Materials, Electronic Structure of Materials, Heyendaalseweg 135, 6525 AJ Nijmegen, The Netherlands
E-mail:
g.dewijs@science.ru.nl
Fax: +31 (0)24 3652120
Tel: +31 (0)24 3652984
b Computational Materials Science, Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, P.O. Box 217, Enschede, The Netherlands
c Solid State Materials for Electronics, Zernike Institute for Advanced Materials, Rijksuniversiteit Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
The
E. Hazrati, G. Brocks, B. Buurman, R. A. de Groot and G. A. de Wijs, Phys. Chem. Chem. Phys., 2011, 13, 6043 DOI: 10.1039/C0CP01540G
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