Issue 23, 2011
From the journal:

CrystEngComm

Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: important role of hydrogen donor

X. H. Huang,*ab   C. B. Tay,ab   Z. Y. Zhan,c   C. Zhang,ad   L. X. Zheng,c   T. Venkatesanab  and  S. J. Chua*abde  

* Corresponding authors

a Department of Electrical and Computer Engineering, Faculty of Engineering, National University of Singapore, Singapore
E-mail: xhhuang@issp.ac.cn, elecsj@nus.edu.sg

b NUSNNI-Nanocore Laboratory, National University of Singapore, Singapore

c School of Mechanical and Aerospace Engineering, Nanyang Technological University, Singapore

d Singapore-MIT Alliance, E4-04-10, 4 Engineering Drive 3, Singapore

e Institute of Materials Research and Engineering, Agency for Science, Technology and Research, 3 Research Link, Singapore

Abstract

Poor near-band-edge emission (NBE) prohibits the application of solution-grown ZnO nanorods in optoelectronics, thus their photoluminescence (PL) was studied with respect to post-annealing temperature and duration. A universal behavior was revealed: NBE was enhanced by one order (or two) of magnitude after annealing in air (or H2) at about 425 °C for 30 min, while the enhancement factor starts to decrease after annealing at higher temperatures. The evolution of PL was mainly ascribed to annealing-induced activation and dissociation of hydrogen donor, which was identified as HO by both PL and Raman analyses. Results from nanorods with different diameters and annealing gases further support this assignment. The results provide new insights to understand and optimize the properties of solution-grown ZnO.

Graphical abstract: Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: important role of hydrogen donor

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Article information

DOI
https://doi.org/10.1039/C1CE05882G
Article type
Paper
Submitted
13 Jul 2011
Accepted
05 Sep 2011
First published
30 Sep 2011

CrystEngComm, 2011,13, 7032-7036

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Universal photoluminescence evolution of solution-grown ZnO nanorods with annealing: important role of hydrogen donor

X. H. Huang, C. B. Tay, Z. Y. Zhan, C. Zhang, L. X. Zheng, T. Venkatesan and S. J. Chua, CrystEngComm, 2011, 13, 7032 DOI: 10.1039/C1CE05882G

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