Synthesis and transport properties of Si-doped In2O3(ZnO)3 superlattice nanobelts
Abstract
Si-doped In2O3(ZnO)3 superlattice nanobelts were synthesized viachemical vapor deposition. The
* Corresponding authors
a
Heilongjiang Province Key Lab for Low-Dimensional System and Mesoscopic Physics and School of Physics and Electronic Engineering, Harbin Normal University, Harbin, People's Republic of China
E-mail:
xtzhangzhang@hotmail.com
b Department of Physics, The Chinese University of Hong Kong, Shatin, Hong Kong, People's Republic of China
c Center for Engineering Training and Basic Experimentation, Heilongjiang Institute of Science and Technology, Harbin, People's Republic of China
Si-doped In2O3(ZnO)3 superlattice nanobelts were synthesized viachemical vapor deposition. The
J. Y. Zhang, Y. Lang, Z. Q. Chu, X. Liu, L. L. Wu and X. T. Zhang, CrystEngComm, 2011, 13, 3569 DOI: 10.1039/C1CE00004G
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