Issue 5, 2011

Dielectric phase transition and relaxor behavior in BaTiO3/LaNiO3 superlattice

Abstract

(001)-oriented BaTiO3/LaNiO3 superlattices with a symmetric structure were fabricated on LaNiO3 buffered Si substrates. The formation of superlattice was confirmed by X-ray diffraction and transmission electron microscope observations. In contrast to the sharp dielectric transition of pure bulk BaTiO3, a broad dielectric anomaly with shift in dielectric maxima toward higher temperature with increasing frequency is observed, suggesting the system exhibits diffusive phase transition following the Vogel–Fulcher relationship. Furthermore, with decreasing stacking periodicity, out-of-plane lattice constant of the superlattice is increased, room temperature dielectric constant is enhanced, while phase transition temperature is decreased. The observed structure-dielectricity correlation is attributed to both strain effect of the inserted LaNiO3 layer and the interfacial Maxwell–Wagner effect.

Graphical abstract: Dielectric phase transition and relaxor behavior in BaTiO3/LaNiO3 superlattice

Article information

Article type
Paper
Submitted
23 Sep 2010
Accepted
16 Nov 2010
First published
02 Dec 2010

CrystEngComm, 2011,13, 1693-1696

Dielectric phase transition and relaxor behavior in BaTiO3/LaNiO3 superlattice

L. Qiao and X. Bi, CrystEngComm, 2011, 13, 1693 DOI: 10.1039/C0CE00665C

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