Issue 43, 2011

Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors

Abstract

The design, synthesis and structure–property investigation of a new thienopyrrolyl dione substituted oligothiophene material showing reduced band gap energy, low lying LUMO energy level and ambipolar semiconducting behaviour is described.

Graphical abstract: Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors

Supplementary files

Article information

Article type
Communication
Submitted
12 Jul 2011
Accepted
21 Aug 2011
First published
02 Sep 2011

Chem. Commun., 2011,47, 11840-11842

Thienopyrrolyl dione end-capped oligothiophene ambipolar semiconductors for thin film- and light emitting transistors

M. Melucci, M. Zambianchi, L. Favaretto, M. Gazzano, A. Zanelli, M. Monari, R. Capelli, S. Troisi, S. Toffanin and M. Muccini, Chem. Commun., 2011, 47, 11840 DOI: 10.1039/C1CC14179A

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