Silicon-doped hematitenanosheets with superlattice structure†
Abstract
We report a universal strategy for doping
* Corresponding authors
a
Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanotechnology, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei, China
E-mail:
chliang@issp.ac.cn
Fax: (+86)0551-5591434
b Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, China
We report a universal strategy for doping
J. Liu, C. Liang, H. Zhang, S. Zhang and Z. Tian, Chem. Commun., 2011, 47, 8040 DOI: 10.1039/C1CC12513C
To request permission to reproduce material from this article, please go to the Copyright Clearance Center request page.
If you are an author contributing to an RSC publication, you do not need to request permission provided correct acknowledgement is given.
If you are the author of this article, you do not need to request permission to reproduce figures and diagrams provided correct acknowledgement is given. If you want to reproduce the whole article in a third-party publication (excluding your thesis/dissertation for which permission is not required) please go to the Copyright Clearance Center request page.
Read more about how to correctly acknowledge RSC content.
Fetching data from CrossRef.
This may take some time to load.
Loading related content